ULTRA

Designed to produce mature semiconductor photomasks

Product Description
The ULTRA is a qualified laser mask writer specifically for mature semiconductor photomasks. Semiconductor photomasks are used to fabricate electronic devices including microcontrollers, power management, LED, Internet of Things (IoT) and MEMS.

The ULTRA is an economical mask writer solution with all the features and functionality required for high throughput, precision and structure uniformity, and extremely accurate alignment. The standard configuration includes all modules (FX Fast mode, SMIF Pod, etc). The ULTRA can produce structure sizes down to 500 nm at write speeds up 580 mm² per minute, while featuring excellent critical dimension uniformity, image quality, overlay and registration. The ULTRA is a compact system and fits easily into the existing mask shop infrastructure.
Product Highlights
High Exposure Quality

Line edge roughness 20 nm; CD uniformity 30 nm; positioning accuracy 40 nm; real-time optical autofocus; custom high numerical aperture (NA) write-lens optimized for laser exposure

High Precision

XY stage fully designed and manufactured by Heidelberg Instruments; full air bearing stage; zero thermal expansion ZERODUR™ chuck; differential interferometer for position measurement

Precise Second Layer Alignment

Sophisticated correction matrix based on a 2D measurement of the first layer. Compensation of arbitrary local position distortions; 100 nm accuracy

High Throughput

High-speed SLM with high data rate for fast exposure. 6″ mask in <45 minutes

Writing Stability

Closed-loop environmental chamber complies with stringent requirements for semiconductor photomask production; integrated metrology system with flowbox and software corrections compensates for any variations in environmental parameters

Long Lifetime

Economical high-power DPSS 355 nm laser; 20000 hours of guaranteed lifetime
Available Modules

The ULTRA is a qualified laser mask writer specifically for mature semiconductor photomasks. Semiconductor photomasks are used to fabricate electronic devices including microcontrollers, power management, LED, Internet of Things (IoT) and MEMS.

The ULTRA is an economical mask writer solution with all the features and functionality required for high throughput, precision and structure uniformity, and extremely accurate alignment. The standard configuration includes all modules (FX Fast mode, SMIF Pod, etc). The ULTRA can produce structure sizes down to 500 nm at write speeds up 580 mm² per minute, while featuring excellent critical dimension uniformity, image quality, overlay and registration. The ULTRA is a compact system and fits easily into the existing mask shop infrastructure.

High Exposure Quality

Line edge roughness 20 nm; CD uniformity 30 nm; positioning accuracy 40 nm; real-time optical autofocus; custom high numerical aperture (NA) write-lens optimized for laser exposure

High Precision

XY stage fully designed and manufactured by Heidelberg Instruments; full air bearing stage; zero thermal expansion ZERODUR™ chuck; differential interferometer for position measurement

Precise Second Layer Alignment

Sophisticated correction matrix based on a 2D measurement of the first layer. Compensation of arbitrary local position distortions; 100 nm accuracy

High Throughput

High-speed SLM with high data rate for fast exposure. 6″ mask in <45 minutes

Writing Stability

Closed-loop environmental chamber complies with stringent requirements for semiconductor photomask production; integrated metrology system with flowbox and software corrections compensates for any variations in environmental parameters

Long Lifetime

Economical high-power DPSS 355 nm laser; 20000 hours of guaranteed lifetime

Customer applications

The ULTRA’s data path has been designed to be able to handle even complex geometries and dense patterns while upholding high exposure speed – even round or circular features can be written easily. The image shows circles (Ø 5 µm) etched in chrome with a line width of 600 nm.
(Courtesy of Heidelberg Instruments) — The ULTRA’s data path has been designed to be able to handle even complex geometries and dense patterns while upholding high exposure speed – even round or circular features can be written easily. The image shows circles (Ø 5 µm) etched in chrome with a line width of 600 nm. (Courtesy of Heidelberg Instruments)

This optical microscope image shows a structure etched in chrome with a line width of 700 nm.
(Courtesy of Heidelberg Instruments) — This optical microscope image shows a structure etched in chrome with a line width of 700 nm. (Courtesy of Heidelberg Instruments)

Regular structure showing unifomity etched in chrome (line width 1 μm).
Optical microscope image with a top illumination.
(Courtesy of Heidelberg Instruments) — Regular structure showing unifomity etched in chrome (line width 1 μm). Optical microscope image with a top illumination. (Courtesy of Heidelberg Instruments)

The image shows 500 nm tilted lines and spaces; a key element of major relevance to many applications like processors, printed circuits, and structures in photonics, for example optical grids.
(Courtesy of Heidelberg Instruments) — The image shows 500 nm tilted lines and spaces; a key element of major relevance to many applications like processors, printed circuits, and structures in photonics, for example optical grids. (Courtesy of Heidelberg Instruments)

500 nm holes with high density in IP3250 resist on Si Wafer. Uniformity of the exposure.
(Courtesy of Heidelberg Instruments) — 500 nm holes with high density in IP3250 resist on Si Wafer. Uniformity of the exposure. (Courtesy of Heidelberg Instruments)

SEM image of a waveguide pattern exposed in a 550 nm thick positive resist showing nice smooth edges and sharp vertical walls.
(Courtesy of IMS Chips) — SEM image of a waveguide pattern exposed in a 550 nm thick positive resist showing nice smooth edges and sharp vertical walls. (Courtesy of IMS Chips)

	QX mode	FX mode
Writing performance
Address grid [nm]	4	10
Line edge roughness [3σ, nm]	20	40
Position accuracy [3σ, nm]	40	100
Overlay [3σ, nm]	30	60
Stitching [3σ, nm]	20	60
2nd layer alignment [max error / nm]	100	100
CD uniformity [3σ, nm]	30	60
Minimum feature size [nm]	500	700
Write speed [mm² / min]	325	580
Write time for 6″ x 6″ [min]	75	45

Operation
Protocols, standards	SECS / GEM protocols
User interface (software)	SEMI-compliant GUI
Maximum write area	228 x 228 mm² (others on request)
Substrate size	4", 5", 6", 7", and 9" masks (larger and other substrates on request)

System features
Optics	0.9 NA objective lens Low-distortion UV optics Automatic calibration routines
Laser	355 nm high-power solid state laser Highly economical compared to gas laser
Focus system	Real-time optical autofocus
Alignment	Camera system Distortion compensation Global and Field-by-field alignment Edge detector
Data path	Real-time compression Scalable hardware concept Input formats: All standard formats, e.g. GDSII and Jobdeck
Spatial Light Modulator	Frequency 350 kHz Data rate 2.4 GB/s
Loader	Automatic mask loader with two independent carrier stations

System dimensions	System / Electronic rack
Width [mm]	2995 / 800
Depth [mm]	1652 / 650
Height [mm]	2102 / 1800
Weight [kg]	3400 / 180

Installation requirements
Electrical	400 VAC ± 5%, 50/60 Hz, 16A, 3 phases
Compressed air	7 - 10 bar (without oil or other residue)

Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice.

Download BROCHURE

ULTRA

Designed to produce mature semiconductor photomasks

High Exposure Quality

High Precision

Precise Second Layer Alignment

High Throughput

Writing Stability

Long Lifetime

High Exposure Quality

High Precision

Precise Second Layer Alignment

High Throughput

Writing Stability

Long Lifetime

Customer applications

Technical Data

Get in Touch

Sign up

Stay connected

APPLICATIONS

CORE TECHNOLOGIES

KEY FEATURES

PRODUCTS

SERVICE

COMPANY