High & Ultra-High Resolution

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300 nm with Optical and 15 nm with Thermal Scanning Probe Lithography

  • Description

  • Resolution can be much more than just the smallest feature size possible. Depending on the application, the deciding factor for high resolution can be feature density, restrictions on geometry, line-edge roughness, or CD uniformity.

    In ultra-high resolution lithography, for resolutions of below 100nm in size, the actual process for resist choice and etching, as well as the metrology functionality, become critical factors.

    The specifications that we provide for our lithography systems are conservative and are easily achievable during the site acceptance, meaning that the exposure results from our systems could be better than what is advertised (as shown in a few examples).

    We strive to push technology to the physical limits of resolution. Our optical systems can reach dimensions down to 300 nm, while our NanoFrazor Thermal Scanning Probe Lithography system can achieve 15 nm isolated feature sizes using the ultra-sharp heated tips.

Resolution can be much more than just the smallest feature size possible. Depending on the application, the deciding factor for high resolution can be feature density, restrictions on geometry, line-edge roughness, or CD uniformity.

In ultra-high resolution lithography, for resolutions of below 100nm in size, the actual process for resist choice and etching, as well as the metrology functionality, become critical factors.

The specifications that we provide for our lithography systems are conservative and are easily achievable during the site acceptance, meaning that the exposure results from our systems could be better than what is advertised (as shown in a few examples).

We strive to push technology to the physical limits of resolution. Our optical systems can reach dimensions down to 300 nm, while our NanoFrazor Thermal Scanning Probe Lithography system can achieve 15 nm isolated feature sizes using the ultra-sharp heated tips.

Related images

The 300 nm wide channel waveguide coupled to a ring resonator with a radius of 3 µm was written using the high-resolution write mode HiRes on the DWL 66+. Submicron waveguides, resonators and similar microstructures are used in optoelectronics to guide or study electromagnetic radiation. This design was created with the “Nanolithography Toolbox”, K.C. Balram et al., J. Res. natl. Inst. Stand. 121, pp. 464-475 (2016).
The 300 nm wide channel waveguide coupled to a ring resonator with a radius of 3 µm was written using the high-resolution write mode HiRes on the DWL 66+. Submicron waveguides, resonators and similar microstructures are used in optoelectronics to guide or study electromagnetic radiation. This design was created with the “Nanolithography Toolbox”, K.C. Balram et al., J. Res. natl. Inst. Stand. 121, pp. 464-475 (2016).
A tilted SEM image of high resolution nested L-structures etched into silicon. (Courtesy of IBM Research Zurich & Heidelberg Instruments Nano)
A tilted SEM image of nested L-structures etched into silicon. (Courtesy of IBM Research Zurich & Heidelberg Instruments Nano)
Example of a tapered line showing the possibility to resolve 500 nm line width through 1.5 µm thick resist.
Example of a tapered line showing the possibility to resolve 500 nm line width through 1.5 µm thick resist.
A triangular array of alumina dots with diameter of approximately 16 nm was patterned via the high-resolution lift-off process.
A triangular array of alumina dots with diameter of approximately 16 nm was patterned via the high-resolution lift-off process. (Courtesy of Heidelberg Instruments Nano)
A SEM image of a 20 nm gap in between two metal electrodes patterned by NanoFrazor and transferred via the high-resolution lift-off process.
A SEM image of a 20 nm gap in between two metal electrodes patterned by NanoFrazor and transferred via the high-resolution lift-off process. (Courtesy of Heidelberg Instruments Nano)
Densely packed gold pillars for plasmonic applications. The PPA resist all around the pillars was removed by the heated NanoFrazor tip. Ar ion beam etching was applied to transfer the pillars into a 20 nm Au film.
Densely packed gold pillars for plasmonic applications. The PPA resist all around the pillars was removed by the heated NanoFrazor tip. Ar ion beam etching was applied to transfer the pillars into a 20 nm Au film.
Lines and spaces with 13.8 nm half-pitch and 2.3 nm LER (3 sigma) in Si. The structures have been etched by reactive ion etching around 50 nm deep into Si from features written into PPA resist by NanoFrazor lithography.
Lines and spaces with 13.8 nm half-pitch and 2.3 nm LER (3 sigma) in Si. The structures have been etched by reactive ion etching around 50 nm deep into Si from features written into PPA resist by NanoFrazor lithography. (Publication by Ryu et al., ACS Nano, 2017)
Narrow and broader lines contacted to electrodes prepared by electron beam lithography. The pattern was deposited via the high-resolution lift-off process.
Narrow and broader lines contacted to electrodes prepared by electron beam lithography. The pattern was deposited via the high-resolution lift-off process. (Courtesy of Bojun Cheng, ETH Zurich & Heidelberg Instruments Nano)
500 nm lines and spaces patterned with the DWL 66+ and etched into a chrome photo mask.
500 nm lines and spaces patterned with the DWL 66+ and etched into a chrome photo mask.
An ultra-high resolution lift-off process was applied after NanoFrazor lithography in PPA to deposit well defined ellipses made of SiO2 on top of a granular magnetic material.
An ultra-high resolution lift-off process was applied after NanoFrazor lithography in PPA to deposit well defined ellipses made of SiO2 on top of a granular magnetic material.
Gap between two metal electrodes made with NanoFrazor lithography in PPA resist and a simple lift-off process.
Gap between two metal electrodes made with NanoFrazor lithography in PPA resist and a simple lift-off process.
NanoFrazor lithography at its (current) limits. The NanoFrazor AFM image shows inlets with 8.7 nm half-pitch written 2-4 nm deep into PPA. (Pattern transfer was not demonstrated yet at this high feature density PPA structures.)
NanoFrazor lithography at its (current) limits. The NanoFrazor AFM image shows inlets with 8.7 nm half-pitch written 2-4 nm deep into PPA. (Pattern transfer was not demonstrated yet at this high feature density PPA structures.)
High-resolution asymmetrical rings transferred into a gold film via ion beam etching.
High-resolution asymmetrical rings transferred into a gold film via ion beam etching. (Courtesy of Heidelberg Instruments Nano)

suitable Systems

NanoFrazor tabletop

NanoFrazor

  • Thermal Scanning Probe Lithography System

Versatile & modular tool combining Thermal Scanning Probe Lithography, Direct Laser Sublimation, and advanced automation for cutting-edge R&D. 

DWL 66+

DWL 66+

  • Direct Write Laser Lithography System

Our most versatile system for research and prototyping with variable resolution and wide selection of options.

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