The versatile tool for research and prototyping with variable resolution and a large selection of modules for easy customization
The DWL 66+ laser lithography tool is a high-resolution direct-write pattern generator. As an allrounder, the DWL 66+ is ideal for research and development (R&D) in microelectronics, MEMS, microfluidics, sensors, non-standard substrates, advanced packaging — virtually any academic application that requires microstructure fabrication. The DWL 66+ stands out with its Grayscale Exposure Mode which creates complex 2.5D microstructures such as micro-optics for mobile applications, diffractive optical elements (DOE), computer-generated holograms, and structured surfaces.
It is a highly flexible and customizable system that precisely matches the requirements of your applications. Among the key features of the DWL 66+ are a high-resolution mode, front- and backside alignment, absolute position calibration and an automatic loading system.
Exposure Quality
Grayscale Lithography
Versatility
6 Write Modes
Exposure Wavelength
Autofocus
Variable substrate
2 Grayscale Modes
High-Accuracy Option
Automatic Loader
Basic Freeform (BFF)
Vector Scan Mode
Customer applications
Technical Data
Write mode | HiRes | I | II | III | IV | V |
---|---|---|---|---|---|---|
Writing performance | ||||||
Minimum Feature Size [μm] | 0.3 | 0.6 | 0.8 | 1 | 2 | 4 |
Minimum Lines and Spaces [μm] | 0.5 | 0.8 | 1 | 1.5 | 3 | 5 |
Address Grid [nm] | 5 | 10 | 25 | 50 | 100 | 200 |
Edge Roughness [3σ, nm] | 50 | 50 | 70 | 80 | 110 | 160 |
CD Uniformity [3σ, nm] | 60 | 70 | 80 | 130 | 250 | 400 |
2nd Layer Alignment over 5 x 5 mm² [nm] | 250 | 250 | 250 | 250 | 350 | 500 |
2nd Layer Alignment over 100 x 100 mm² [nm] | 500 | 500 | 500 | 500 | 800 | 1000 |
Backside Alignment [nm] | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
With Diode Laser (405 nm) | ||||||
Write speed [mm²/min] | 3 | 13 | 40 | 150 | 600 | 2000 |
Exposure Time for 100 x 100 mm² area [min] | 3000 | 740 | 255 | 72 | 20 | 7 |
With UV Diode Laser (375 nm) | ||||||
Write Speed [mm²/min] | 2 | 10 | 30 | 110 | - | - |
Exposure Time for 100 x 100 mm² area [min] | 5000 | 1015 | 350 | 100 | - | - |
System features | |
---|---|
Light Source | Diode laser with 405 nm or 375 nm |
Substrate Sizes | Variable: 5 x 5 mm² to 9″ x 9″ | Customizable on request |
Substrate Thickness | 0 to 12 mm |
Maximum Exposure Area | 200 x 200 mm² |
Temperature controlled Flow Box | Temperature stability ± 0.1°, ISO 4 environment |
Real-Time Autofocus | Optical autofocus or air-gauge autofocus |
Autofocus Compensation Range | 80 μm |
Standard or Advanced Grayscale Mode | 128 / 256 gray levels respectively |
Vector Mode | Enables the writing of stitching-free lines |
Overview Camera | 8 x 10 mm² field of view facilitates alignment to marks and substrate navigation |
Backside Alignment (optional) | Allows the alignment of exposures to structures on the backside of the substrate |
Advanced Options - Performance Upgrades | |
High-Accuracy Coordinate System | Includes golden plate calibration and climate monitoring: 2nd layer alignment down to 350 nm |
Professional Grayscale Mode | 1024 gray levels, professional data conversion software |
Automatic Loading System | Handling of masks up to 7" and wafers up to 8" with two carrier stations, pre-aligner and wafer scanner |
System Dimensions of Standard Version | |
Width × depth × height | 1300 mm × 1100 mm × 1950 mm (lithography unit only) |
Weight | 1000 kg (lithography unit only) |
Installation requirements | |
Electrical | 230 VAC ± 5 %, 50/60 Hz, 16 A |
Compressed air | 6 - 10 bar |
Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice