Designed to produce non-critical semiconductor photomasks

The Ultra is a qualified laser mask writer specifically for mature semiconductor photomasks. Semiconductor photomasks are used to fabricate electronic devices including microcontrollers, power management, LED, Internet of Things (IoT) and MEMS.

The ULTRA is an economical mask writer solution with all the features and functionality required for high throughput, precision and structure uniformity, and extremely accurate alignment. The standard configuration includes all modules (FX Fast mode, SMIF Pod, etc). The ULTRA can produce structure sizes down to 500 nm at write speeds up 580 mm2 per minute, while featuring excellent critical dimension uniformity, image quality, overlay and registration. ULTRA is a compact system and fits easily into the existing mask shop infrastructure.

High Exposure Quality

Line edge roughness 20 nm; CD uniformity 30 nm; positioning accuracy 40 nm; real-time optical autofocus; custom high numerical aperture (NA) write-lens optimized for laser exposure

High Precision

XY stage fully designed and manufactured by Heidelberg Instruments; full air bearing stage; zero thermal expansion zerodur™ chuck; differential interferometer for position measurement

Precise Second Layer Alignment

Sophisticated correction matrix based on a 2D measurement of the first layer. Compensation of arbitrary local position distortions; 100 nm accuracy

High Throughput

High-speed SLM with high data rate for fast exposure. 6″ mask in < 45 minutes

Writing Stability

Closed-loop environmental chamber complies with stringent requirements for semiconductor photomask production; integrated metrology system with flowbox and software corrections compensates for any variations in environmental parameters

Long life-time

Economical high-power DPSS 355 nm laser; 20,000 hours of guaranteed lifetime

Overall Cost of Ownership

Laser power consumption ca. 25.270 EUR/year at 0.2 EUR/kWh, 90% tool operation; other consumables 38.500 EUR/year


1.65 m x 2.54 m

Optimal Fracturing

of Complex Curved Data Rule

FXFast Mode

PSM Option


Proximity/Process Effect Correction

Flexible Stripe Width and Positioning


Distortion Control

Mura Optimization

Measurement Toolbox

Customer applications

Technical Data

QX modeFX mode
Writing performance
Address grid [nm]410
Line edge roughness [3σ, nm]2040
Position accuracy [3σ, nm]40100
Overlay [3σ, nm]3060
Stitching [3σ, nm]2060
2nd layer alignment [max error / nm]100100
CD uniformity [3σ, nm]3060
Minimum feature size [nm]500700
Write speed [mm² / min]325580
Write time for 6″ x 6″ [min]7545
Protocols, standardsSECS / GEM protocols
User interface (software)SEMI-compliant GUI
Maximum write area228 x 228 mm²
Substrate size4", 5", 6", 7", and 9" masks (larger and other substrates on request
System features
Optics0.9 NA objective lens
Low-distortion UV optics
Automatic calibration routines
Laser355 nm high-power solid state laser
Highly economical compared to gas laser
Focus systemReal-time optical autofocus
AlignmentCamera system
Distortion compensation
Field-by-field alignment
Edge detector
Data pathReal-time compression
Scalable hardware concept
Input formats: All standard formats, e.g. GDSII and Jobdeck
Spatial Light ModulatorFrequency 350 kHz
Data rate 2.4 GB/s
LoaderAutomatic mask loader with two independent carrier stations
System dimensionsSystem / Electronic rack
Width [mm]2730 / 800
Depth [mm]1650 / 650
Height [mm]2100 / 1800
Weight [kg]3400 / 180
Installation requirements
Electrical400 VAC ± 5%, 50/60 Hz, 32 A
Compressed air7 - 10 bar (without oil or other residue)

Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice

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