A powerful production tool for standard photomasks and microstructures in i-line resists

VPG+ 200/400 Volume Pattern Generators are direct laser lithography systems designed for i-line resist applications on small and mid size subtrates up to 410 mm x 410 mm. Applications include product prototyping, MEMS, advanced packaging, 3D integration, LED and OLED production, microfluidics and compound semiconductors.

VPG+ features an ultra-high-speed exposure engine and automated alignment, both specifically developed for the VPG+ 200/400 systems. This field-proven technology combines high resolution, outstanding image quality and fast throughput. Stabilization of writing conditions ensures mask-to-mask reproducibility and compensates for any variations during long exposures.

Exposure Quality

Edge roughness 40 nm; CD uniformity 65 nm; Mura correction; edge detection

High Exposure Speed

Custom-made high-speed spatial light modulator; optimized optical engine performance and data path, making it the fastest tool available on the market in its category; 14″ (400 mm) in <21 minutes

Writing Stability

Integrated metrology system with flowbox and software correction to compensate for any variations in environmental parameters

Alignment Accuracy

2nd layer alignment 225 nm; autofocus compensation range 80 um; stitching 60 nm

Automated Alignment

Automated global and field alignment with distortion correction. Sophisticated 2D correction matrix for stage position calibration

Overall Cost of Ownership

Laser power consumption ca. 25.270 EUR/year at 0.2 EUR/kWh, 90% tool operation; other consumables 38.500 EUR/year

Variable Stage Dimensions

Accommodate substrates up to 205 mm or 410 mm

3 Write Modes

Resolution varying from 750 nm to 2 µm

Laser Source

355 nm laser for exposing i-line resists such as SU-8 and IP 3600. 532 nm laser for writing emulsion photomasks


Backside alignment, infrared alignment, special substrate handling on request

Service Contracts

Service Level Agreements for faster on-site support and access to spare parts

Customer applications

Technical Data

Write modeIIIIII
Writing performance
Minimum structure size [μm]0.7512
Address grid [nm]12.52550
Edge roughness [3σ, nm]405070
CD uniformity [3σ, nm]6575110
Stitching [3σ, nm]6070100
2nd layer alignment [3σ, nm]225350500
Write speed [mm²/min] 97031506400
System features
Light sourceHigh power DPSS laser with 355 nm
Maximum substrate sizes9″ x 9″ / 17″ x 17″
Substrate thickness0 to 9 mm
Maximum exposure area205 mm x 205 mm / 410 mm x 410 mm
AutofocusRealtime autofocus system
Autofocus compensation range80 µm
Flowbox(Closed-loop) temperature controlled environmental chamber
Alignment Camera system for metrology and alignment
Other featuresStage map correction, Mura correction, Edge detector system, Multiple data input formats (DXF, CIF, GDSII and Gerber files)
System dimensionsVPG+ 200/400
System / Electronic rack
Width [mm]2350 / 800
Depth [mm]1650 / 650
Height [mm]2100 / 1800
Weight [kg]3000 / 180
Installation requirements
Electrical400 VAC ± 5 %, 50/60 Hz, 32 A
Compressed air6 - 10 bar

Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice

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Please send us your request.

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