DWL 2000 GS / DWL 4000 GS

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The industrial-level grayscale lithography tool

  • Product Description

  • The DWL 2000 GS / DWL 4000 GS Laser Lithography systems are fast and flexible high-resolution pattern generators. They are optimized for industrial-level Grayscale Lithography and designed for high-throughput patterning of masks and wafers for integrated circuits, MEMS, micro-optic and microfluidic devices, sensors, holograms, and security features on banknotes and ID cards.

    The Professional Grayscale Lithography Mode enables patterning of complex 2.5D structures in thick photoresist over large areas. With a minimum feature size of 500 nm, a write area of up to 400 x 400 mm2 and optional automatic loading system, the DWL 2000 GS / DWL 4000 GS systems are particularly suitable for wafer-level micro-optics used for telecommunications, illumination, and industrial display manufacturing, as well as for device fabrication in life sciences.

    The DWL 2000 GS / DWL 4000 GS Laser Lithography systems are fast and flexible high-resolution pattern generators. They are optimized for industrial-level Grayscale Lithography and designed for high-throughput patterning of masks and wafers for integrated circuits, MEMS, micro-optic and microfluidic devices, sensors, holograms, and security features on banknotes and ID cards.

    The Professional Grayscale Lithography Mode enables patterning of complex 2.5D structures in thick photoresist over large areas. With a minimum feature size of 500 nm, a write area of up to 400 x 400 mm2 and optional automatic loading system, the DWL 2000 GS / DWL 4000 GS systems are particularly suitable for wafer-level micro-optics used for telecommunications, illumination, and industrial display manufacturing, as well as for device fabrication in life sciences.

  • Product Highlights

  • Exposure Quality

    CD uniformity 60 nm; edge roughness 40 nm; alignment accuracy 60 nm; 2nd layer alignment 250 nm; autofocus compensation 80 µm

    Grayscale Lithography

    1024 gray levels; dedicated GenISys BEAMER software for optimizing the exposure of complex geometries

    Temperature-controlled Flow Box

    Temperature stability ± 0.1°, ISO 4 environment

    Exposure Speed

    area of 200 x 200 mm2 in grayscale mode in <60 minutes

    Large Substrate Size

    Up to 20 / 40 cm

  • Available Modules

  • 5 Write Modes

    Minimum feature sizes from 500 nm to 2 μm

    Exposure Wavelength

    Diode laser at 405 nm

    Autofocus

    Air-gauge or optical

    Automation

    Loading unit; additional substrate carrier station, pre-aligner, and substrate scanner

    GenISys BEAMER

    Conversion software packages with 3D proximity correction (3D-PEC) for grayscale exposures of complex shapes

The DWL 2000 GS / DWL 4000 GS Laser Lithography systems are fast and flexible high-resolution pattern generators. They are optimized for industrial-level Grayscale Lithography and designed for high-throughput patterning of masks and wafers for integrated circuits, MEMS, micro-optic and microfluidic devices, sensors, holograms, and security features on banknotes and ID cards.

The Professional Grayscale Lithography Mode enables patterning of complex 2.5D structures in thick photoresist over large areas. With a minimum feature size of 500 nm, a write area of up to 400 x 400 mm2 and optional automatic loading system, the DWL 2000 GS / DWL 4000 GS systems are particularly suitable for wafer-level micro-optics used for telecommunications, illumination, and industrial display manufacturing, as well as for device fabrication in life sciences.

The DWL 2000 GS / DWL 4000 GS Laser Lithography systems are fast and flexible high-resolution pattern generators. They are optimized for industrial-level Grayscale Lithography and designed for high-throughput patterning of masks and wafers for integrated circuits, MEMS, micro-optic and microfluidic devices, sensors, holograms, and security features on banknotes and ID cards.

The Professional Grayscale Lithography Mode enables patterning of complex 2.5D structures in thick photoresist over large areas. With a minimum feature size of 500 nm, a write area of up to 400 x 400 mm2 and optional automatic loading system, the DWL 2000 GS / DWL 4000 GS systems are particularly suitable for wafer-level micro-optics used for telecommunications, illumination, and industrial display manufacturing, as well as for device fabrication in life sciences.

Exposure Quality

CD uniformity 60 nm; edge roughness 40 nm; alignment accuracy 60 nm; 2nd layer alignment 250 nm; autofocus compensation 80 µm

Grayscale Lithography

1024 gray levels; dedicated GenISys BEAMER software for optimizing the exposure of complex geometries

Temperature-controlled Flow Box

Temperature stability ± 0.1°, ISO 4 environment

Exposure Speed

area of 200 x 200 mm2 in grayscale mode in <60 minutes

Large Substrate Size

Up to 20 / 40 cm

5 Write Modes

Minimum feature sizes from 500 nm to 2 μm

Exposure Wavelength

Diode laser at 405 nm

Autofocus

Air-gauge or optical

Automation

Loading unit; additional substrate carrier station, pre-aligner, and substrate scanner

GenISys BEAMER

Conversion software packages with 3D proximity correction (3D-PEC) for grayscale exposures of complex shapes

Customer applications

2.5D features created by Grayscale Lithography are in many cases used for micro-optics. A surface may for example be structured in a targeted way to lead to controlled reflection or diffusion of light. The image shows such a type of periodic surface patterning featuring sharp peaks and tips. (Courtesy of IGI)
2.5D features created by Grayscale Lithography are in many cases used for micro-optics. A surface may for example be structured in a targeted way to lead to controlled reflection or diffusion of light. The image shows such a type of periodic surface patterning featuring sharp peaks and tips. (Courtesy of IGI)
MR-DWL is a special negative resist that enables high-aspect ratio structures with an aspect ratio of up to 1:40. This epoxy-based photoresist from micro resist technology GmbH is specifically optimized for direct-write lithography and DWL systems. It is sensitive above 400 nm and can be applied in a thickness up to several hundreds of microns. (Courtesy of V. Cadarso and J. Brugger, EPFL)
MR-DWL is a special negative resist that enables high-aspect ratio structures with an aspect ratio of up to 1:40. This epoxy-based photoresist from micro resist technology GmbH is specifically optimized for direct-write lithography and DWL systems. It is sensitive above 400 nm and can be applied in a thickness up to several hundreds of microns. (Courtesy of V. Cadarso and J. Brugger, EPFL)
A test pattern exposed with a DWL 2000 shows accurate alignment of elements exposed in two subsequent layers (arrows, crosses, arrow tips). Alignment is a crucial parameter for multilayer lithography applications, such as sensors and semiconductor devices. (Courtesy of Heidelberg Instruments)
A test pattern exposed with a DWL 2000 shows accurate alignment of elements exposed in two subsequent layers (arrows, crosses, arrow tips). Alignment is a crucial parameter for multilayer lithography applications, such as sensors and semiconductor devices. (Courtesy of Heidelberg Instruments)
A diffuser comprising pyramids with 15 µm height and 20 µm base length in AZ4620 resist. Such structured surfaces created by Grayscale Lithography are key elements for micro-optics applications. (Courtesy of Heidelberg Instruments)
A diffuser comprising pyramids with 15 µm height and 20 µm base length in AZ4620 resist. Such structured surfaces created by Grayscale Lithography are key elements for micro-optics applications. (Courtesy of Heidelberg Instruments)
A 2.5D fan-shaped structure, created in AZ4620 with a minimum feature size of less than 5 μm. (Courtesy of Kuraray)
A 2.5D fan-shaped structure, created in AZ4620 with a minimum feature size of less than 5 μm. (Courtesy of Kuraray)
A test pattern exposed with a DWL 2000 shows accurate alignment of elements exposed in two subsequent layers (arrows, crosses, arrow tips). Alignment is a crucial parameter for multilayer lithography applications, such as sensors and semiconductor devices. (Courtesy of Heidelberg Instruments)
A test pattern exposed with a DWL 2000 shows accurate alignment of elements exposed in two subsequent layers (arrows, crosses, arrow tips). Alignment is a crucial parameter for multilayer lithography applications, such as sensors and semiconductor devices. (Courtesy of Heidelberg Instruments)

Why customers choose our systems

“Since our open clean room facility Nanotechnology Hub in Kyoto University (Nano-hub) started in 2011, DWL 2000 is one of the most popular machines for Nano-hub users from both academia and industry. Every year, more than 50 users are using DWL for binary and grayscale lithography on photomask writing and wafer direct writing. We appreciate DWL for its high performance to adopt various requests from users and to extend our facility capability from semiconductor and MEMS to microfluidic devices and micro physiological systems.”

Prof. Dr. Toshiyuki Tsuchiya, Director of Nanotechnology Hub
Kyoto University
Kyoto, Japan

Technical Data

Write modeIIIIII IVV
Writing performance - Grayscale
Overlay [3σ, nm] (over 8” x 8”)300
Pixel Grid Grayscale [nm]1002002505001000
Write Speed DWL 2000 GS [mm2/minute] 125075270870
Write Speed DWL 4000 GS [mm2/minute] 1250752701000
Exposure Time DWL 2000 GS: For 200 mm x 200 mm [hours]5113.592.50.8
Exposure Time DWL 4000 GS: For 400 mm x 400 mm [hours]2235436103
Maximum Dose [mJ/cm2 ]5600140090022550
Writing performance - Binary
Minimum Feature Size [µm]0.50.70.812
Minimum Lines and Spaces [µm]0.70.911.53
Address Grid [nm]51012.52550
Edge Roughness [3σ, nm]40506080110
CD Uniformity [3σ, nm]607080130180
Registration [3σ, nm]200200200200200
Write Speed [mm²/minute] DWL 2000 GS125075270870
Write Speed [mm²/minute] DWL 4000 GS1250752701000
System features
Light sourceDiode laser with 405 nm
Maximum substrate sizeDWL 2000 GS: 9″ x 9″ / DWL 4000 GS: 17″ x 17″
Substrate thickness0 to 12 mm
Maximum exposure areaDWL 2000 GS: 200 x 200 mm² / DWL 4000 GS: 400 x 400 mm²
Temperature controlled flow boxTemperature stability ± 0.1°, ISO 4 environment
Real-time autofocusOptical autofocus or air-gauge autofocus
Autofocus compensation range80 μm
System dimensions
Lithography unit (width × depth × height); weight2350 mm × 1650 mm × 2100 mm; 3000 kg
Electronic rack (width × depth × height); weight800 mm × 600 mm × 1800 mm; 180 kg
Installation requirements
Electrical400 VAC ± 5 %, 50/60 Hz, 16 A
Compressed air6 - 10 bar
CleanroomISO 6 or better recommended

Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice.

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