NANOFRAZOR® EXPLORE

Thermal scanning probe lithography tool with a hybrid direct laser sublimation and grayscale patterning capability

NanoFrazor® Explore is the first commercial thermal scanning probe lithography tool. NanoFrazor® Explore is used for nanopatterning of quantum devices on 1D/2D materials, such as quantum dots, Dolan bridges and Josephson junctions, and nanoscale arrays. Its unique capabilities enable new devices in new materials. For example, it is used for advanced applications such as grayscale photonics devices, nanofluidics structures or biomimetic substrates for cell growth; local modification of materials by heat, e.g. chemical reactions and physical phase changes.

With the direct laser sublimation module, nano- and microstructures are now seamlessly and quickly written into the same resist layer in a single fabrication step. In-situ imaging enables two unique features: markerless overlay, and comparison of the written and target patterns during writing, so the parameters can be immediately adjusted. This approach, called closed-loop lithography, results in sub-2 nm vertical precision for 2.5D (grayscale) shapes of any complexity. Fast and precise control of a heated nanoscale tip enables innovation not otherwise feasible.

The technology behind the system is the result of more than 20 years of intensive research and development (R&D) that started at IBM Research Zürich, and now happens at Heidelberg Instruments Nano. The NanoFrazor® hardware and software are constantly advancing to extend the capabilities and performance of the tool and its range of applications. Our dedicated team of experts keeps developing and optimizing the pattern transfer processes for different applications. We compile this know-how in a growing collection of best practices and protocols to support our customers.

High-resolution

Easy patterning of nanostructures even with complex geometries; min. lateral features 15 nm, Vertical resolution 2 nm

Thermal Scanning Probe Lithography

New approach to nanopatterning enabling applications not otherwise feasible

Non-invasive Lithography

No damage from charged particles, no proximity effects, clean lift-off

Compatibility

With all standard pattern transfer methods: lift-off, etching, etc – knowledge resource and best practices available in our “Recipe Book”

In-situ Imaging

Immediate control of patterned structures

Precise Overlay and Stitching

Markerless overlay and stitching accuracy 25 nm specified, sub-10 nm overlay shown

Unique Thermal Cantilevers

Integrated microheater and distance sensor; easy to exchange and economical

Laser Sublimation Module

High-throughput exposure of coarse structures in the same exposure step; 405 nm wavelength CW fiber laser

Compact

1.85 m x 0.78 m x 1.28 m

Vibration Isolation

Three-layer acoustic and superior vibration isolation (> 98% @ 10 Hz)

Low Cost of Ownership

No need for cleanroom, vacuum pump or expensive consumables

Grayscale Software Module

3D patterning at <2 nm vertical resolution

Glovebox Integration

Customized solution in collaboration with MBraun ensures minimized vibrations for work in controlled environments

Customer applications

Nanofluidic rocking ratchets fabricated with single-nanometer accuracy by NanoFrazor patterning. A nanofluidic device with a precisely engineered 3D topography harnesses Brownian motion to separate particles with down to 1 nm size difference by guiding them in opposite directions.
(Courtesy of IBM Research, Publications in Science and PRL 2018) — Nanofluidic rocking ratchets fabricated with single-nanometer accuracy by NanoFrazor patterning. A nanofluidic device with a precisely engineered 3D topography harnesses Brownian motion to separate particles with down to 1 nm size difference by guiding them in opposite directions. (Courtesy of IBM Research, Publications in Science and PRL 2018)

Gaussians with varying distance ∆x written in PPA and etched into SiO2, to be stacked in distributed Bragg reflector, forming a photonic molecule. Cross-sections show Gaussian profiles for different ∆x, which controls the coupling strength between the cavities. Precise Gaussian profile is patterned using the NanoFrazor and the closed-loop lithography approach. (Courtesy of IBM Research Zurich, publication in 2018)

Indium arsenide (InAs) nanowires are notoriously sensitive to trapped charges that deteriorate the device performance by shifting the switching voltage away from zero and are difficult to remove. Such trapped charges are typical for the fabrication with electron beam lithography. The InAs nanowire device fabricated by NanoFrazor lithography, however, switched off exactly as 0 V.
(Courtesy of S. Karg & A. Knoll, IBM Research – Zurich) — Indium arsenide (InAs) nanowires are notoriously sensitive to trapped charges that deteriorate the device performance by shifting the switching voltage away from zero and are difficult to remove. Such trapped charges are typical for the fabrication with electron beam lithography. The InAs nanowire device fabricated by NanoFrazor lithography, however, switched off exactly as 0 V. (Courtesy of S. Karg & A. Knoll, IBM Research – Zurich)

A Hall-bar device patterned into a single-layer MoS2 flake using the NanoFrazor. The electrical contacts written using the heated tip exhibit vanishingly small Schottky barriers due to no resist residues and no damage to the flake. As a result, the devices with contacts and top gates patterened with the NanoFrazor, show record-high on-off ratios.
(Courtesy of Prof. Elisa Riedo, NYU) — A Hall-bar device patterned into a single-layer MoS2 flake using the NanoFrazor. The electrical contacts written using the heated tip exhibit vanishingly small Schottky barriers due to no resist residues and no damage to the flake. As a result, the devices with contacts and top gates patterened with the NanoFrazor, show record-high on-off ratios. (Courtesy of Prof. Elisa Riedo, NYU)

3D computer-generated 8-level hologram patterned in PPA and etched into Si (inset). Reactive ion etching enabled depth amplification from 70 nm to 700 nm.

Single-electron transistors in doped Si operating at room temperature. The whole device was patterned in under 5 minutes’ time with the mix&match NanoFrazor approach using thermal probe for the sub-25 features and laser writing for the contact wires.
(Courtesy of Imperial college and IBM Research, Publication in 2018) — Single-electron transistors in doped Si operating at room temperature. The whole device was patterned in under 5 minutes’ time with the mix&match NanoFrazor approach using thermal probe for the sub-25 features and laser writing for the contact wires. (Courtesy of Imperial college and IBM Research, Publication in 2018)

	Thermal Probe Writing	Direct Laser Sublimation
Patterning performance
Minimum structure size [nm]	15	600
Minimum lines and spaces [half pitch, nm]	25	1000
Grayscale / 3D-resolution (step size in PPA) [nm]	2	-
Writing field size [X μm x Y μm]	60 x 60	60 x 60
Field stitching accuracy (markerless, using in-situ imaging) [nm]	25	600
Overlay accuracy (markerless, using in-situ imaging) [nm]	25	600
Write speed (typical scan speed) [mm/s]	1	5
Write speed (thermal Probe: 50 nm pixel, incl. imaging) [μm²/min]	1000	100 000

Topography performance
Lateral imaging resolution (feature size) [nm]	10	10
Vertical resolution (topography sensitivity) [nm]	<0.5	<0.5
Imaging speed (50 nm pixel) [μm²/min]	1000	1000

System features
Substrate sizes	1 x 1 mm² to 100 x 100 mm² (150 x 150 mm² possible with limitations) Thickness: 10 mm with optical access, 15 mm without optical access.
Optical microscope	0.6 μm digital resolution, 2 μm diffraction limit, 1.0 mm x 1.0 mm field of view, autofocus
Laser source and optics	405 nm wavelength CW fiber laser, more than 110 mW output power on sample, 1.2 μm minimum focal spot size
Real-time laser autofocus	Using the distance sensor of the NanoFrazor cantilever
Magnetic cantilever holder	Fast (< 1 min) and accurate tip exchange
Housing	Three-layer acoustic isolation, superior vibration isolation (> 98% @ 10 Hz) PC-controlled temperature and humidity monitoring, gas-flow regulation
Software features	GDS and bitmap import, 0.1 nm address grid, 256 grayscale levels, topography image analysis and drawing for overlay, mix & match between tip and laser writing, fully automated calibration routines, Python scripting

NanoFrazor cantilever features
Integrated components	Tip heater, topography sensor, electrostatic actuation
Tip geometry	Conical tip with < 10 nm radius and 750 nm length
Tip heater temperature range	25 °C – 1100 °C (< 1 K setpoint resolution)

System dimensions & installation requirements
Height × width × depth	185 cm x 78 cm x 128 cm
Weight	650 kg
Power input	1 x 110 or 220 V AC, 10 A
Gas input	Compressed air and/or nitrogen with > 4 bar

Other considerations
Recipe book with detailed descriptions of various processes is included (regularly updated with software)
Cantilever tips degrade over time (> 50 h patterning possible). Exchange is fast and low cost for tool owners.
A clean room or special laboratory is not required. No vacuum needed.

Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice

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NANOFRAZOR® EXPLORE

Thermal scanning probe lithography tool with a hybrid direct laser sublimation and grayscale patterning capability

High-resolution

Thermal Scanning Probe Lithography

Non-invasive Lithography

Compatibility

In-situ Imaging

Precise Overlay and Stitching

Unique Thermal Cantilevers

Laser Sublimation Module

Compact

Vibration Isolation

Low Cost of Ownership

Grayscale Software Module

Glovebox Integration

Customer applications

Technical Data

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