The versatile tool for research and prototyping with variable resolution and a large selection of modules for easy customization
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Product Description
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The DWL 66+ laser lithography tool is a high-resolution direct-write pattern generator. As an allrounder, the DWL 66+ is ideal for research and development (R&D) in microelectronics, MEMS, microfluidics, sensors, non-standard substrates, advanced packaging — virtually any academic application that requires microstructure fabrication. The DWL 66+ stands out with its Grayscale Exposure Mode which creates complex 2.5D microstructures such as micro-optics for mobile applications, diffractive optical elements (DOE), computer-generated holograms, and structured surfaces.
It is a highly flexible and customizable system that precisely matches the requirements of your applications. Among the key features of the DWL 66+ are a high-resolution mode, front- and backside alignment, absolute position calibration and an automatic loading system.
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Product Highlights
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Exposure Quality
CD uniformity 60 nm; edge roughness 50 nm; 2nd layer alignment 500 nm; autofocus compensation 80 µmGrayscale Lithography
Up to 1000 gray levels; dedicated GenISys BEAMER software for optimizing the exposure of complex geometriesVersatility
Choice of 6 write modes with 2 laser wavelengths; 3 grayscale exposure regimes; highest amount of additional modules available including automation options -
Available Modules
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6 Write Modes
Min. features from 300 nm to 4 µmExposure Wavelength
Diode laser at 375 nm or 405 nmAutofocus
Air-gauge or optical autofocus for perfect exposure of small samples (less than 10 mm)Variable substrate
Size from 3 mm to 230 mm2 Grayscale Modes
Up to 1000 gray levels and a dedicated GenISys BEAMER software for optimizing the exposure of complex geometriesHigh-Accuracy Option
Various technical measures to improve the thermal stability and position accuracy of the stage’s coordinate system. Improved specifications for 2nd layer alignment: 350 nmAutomatic Loader
Handling of masks up to 7″ and substrates up to 8″. Optional second cassette station. Pre-aligner and wafer scanner availableBasic Freeform (BFF)
Exposures on non-planar substrates with features down to 3 μm. Typical applications are microstructures on top of convex or concave lensesVector Scan Mode
Patterns structures and shapes consisting of curved lines where smooth contours are required
The DWL 66+ laser lithography tool is a high-resolution direct-write pattern generator. As an allrounder, the DWL 66+ is ideal for research and development (R&D) in microelectronics, MEMS, microfluidics, sensors, non-standard substrates, advanced packaging — virtually any academic application that requires microstructure fabrication. The DWL 66+ stands out with its Grayscale Exposure Mode which creates complex 2.5D microstructures such as micro-optics for mobile applications, diffractive optical elements (DOE), computer-generated holograms, and structured surfaces.
It is a highly flexible and customizable system that precisely matches the requirements of your applications. Among the key features of the DWL 66+ are a high-resolution mode, front- and backside alignment, absolute position calibration and an automatic loading system.
Exposure Quality
Grayscale Lithography
Versatility
6 Write Modes
Exposure Wavelength
Autofocus
Variable substrate
2 Grayscale Modes
High-Accuracy Option
Automatic Loader
Basic Freeform (BFF)
Vector Scan Mode
Customer applications
Why customers choose our systems
Dr. Helmut Schift, Head of Advanced Nano Manufacturing Group
Paul Scherrer Institute (PSI)
Villigen, Switzerland
Technical Data
Write mode | HiRes | I | II | III | IV | V |
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Writing performance | ||||||
Minimum Feature Size [μm] | 0.3 | 0.6 | 0.8 | 1 | 2 | 4 |
Minimum Lines and Spaces [μm] | 0.5 | 0.8 | 1 | 1.5 | 3 | 5 |
Address Grid [nm] | 5 | 10 | 25 | 50 | 100 | 200 |
Edge Roughness [3σ, nm] | 50 | 50 | 70 | 80 | 110 | 160 |
CD Uniformity [3σ, nm] | 60 | 70 | 80 | 130 | 250 | 400 |
2nd Layer Alignment over 5 x 5 mm² [nm] | 250 | 250 | 250 | 250 | 350 | 500 |
2nd Layer Alignment over 100 x 100 mm² [nm] | 500 | 500 | 500 | 500 | 800 | 1000 |
Backside Alignment [nm] | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
With Diode Laser (405 nm) | ||||||
Write speed [mm²/min] | 3 | 13 | 40 | 150 | 600 | 2000 |
Exposure Time for 100 x 100 mm² area [min] | 3000 | 740 | 255 | 72 | 20 | 7 |
With UV Diode Laser (375 nm) | ||||||
Write Speed [mm²/min] | 2 | 10 | 30 | 110 | - | - |
Exposure Time for 100 x 100 mm² area [min] | 5000 | 1015 | 350 | 100 | - | - |
System features | |
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Light Source | Diode laser with 405 nm or 375 nm |
Substrate Sizes | Variable: 5 x 5 mm² to 9″ x 9″ | Customizable on request |
Substrate Thickness | 0 to 12 mm |
Maximum Exposure Area | 200 x 200 mm² |
Temperature controlled Flow Box | Temperature stability ± 0.1°, ISO 4 environment |
Real-Time Autofocus | Optical autofocus or air-gauge autofocus |
Autofocus Compensation Range | 80 μm |
Standard or Advanced Grayscale Mode | 128 / 256 gray levels respectively |
Vector Mode | Enables the writing of stitching-free lines |
Overview Camera | 8 x 10 mm² field of view facilitates alignment to marks and substrate navigation |
Backside Alignment (optional) | Allows the alignment of exposures to structures on the backside of the substrate |
Advanced Options - Performance Upgrades | |
High-Accuracy Coordinate System | Includes golden plate calibration and climate monitoring: 2nd layer alignment down to 350 nm |
Professional Grayscale Mode | 1024 gray levels, professional data conversion software |
Automatic Loading System | Handling of masks up to 7" and wafers up to 8" with two carrier stations, pre-aligner and wafer scanner |
System Dimensions of Standard Version | |
Width × depth × height | 1300 mm × 1100 mm × 1950 mm (lithography unit only) |
Weight | 1000 kg (lithography unit only) |
Installation requirements | |
Electrical | 230 VAC ± 5 %, 50/60 Hz, 16 A |
Compressed air | 6 - 10 bar |
Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice