Microelectronics and Nanoelectronics

Rapid Prototyping of Microelectronic and Nanoelectronic Devices

  • Description

  • Advancements in microelectronics continuously rely on shrinking electronic devices and incorporating novel materials in active regions to achieve ever-higher speeds and new functionalities in device structures. This exploration of device architectures and use of new materials necessitates a rapid prototyping approach, enabling efficient testing and implementation of design changes.

    Maskless lithography tools like the MLA, DWL and VPG+ series of Heidelberg Instruments, have emerged as a transformative technology in microelectronics lithography, offering numerous advantages compared to traditional photolithography. Their high resolution and maskless operation enable precise patterning of intricate microscale features, driving the limits of miniaturization. By eliminating physical masks, production costs are reduced, and rapid prototyping becomes feasible, accelerating development cycles. The technology’s flexibility allows for on-the-fly customization, tailoring each device on the wafer according to specific requirements.

    The NanoFrazor facilitates nanoelectronics by combining Thermal Scanning Probe Lithography (t-SPL) with Direct Laser Sublimation. This thermal nanolithography technique enables the creation of nanostructures in the most critical regions of devices with the highest resolutions. The incorporation of laser direct sublimation of the same thermal resists allows for efficient writing of electrical traces and contacts. As a result, the NanoFrazor has become an ideal choice for nanoelectronic device fabrication, particularly in applications such as quantum electronics and molecular sensing.

  • Requirements

  • Dense patterns with high resolution features and low line edge roughness

    Precise overlay of several layers

    Compatibility with existing pattern transfer processes

    Fast turnaround time with high flexibility

  • Solutions

  • Fast prototyping

    No mask required

    No charge accumulation

    Critical insulating layers not impacted by charged particles

    Accurate overlay

    using alignment marks or none. The functional structured layer can be used as reference (NanoFrazor and Draw Mode)

    Ultra-high resolution (15 nm)

    without the need for proximity effect corrections (NanoFrazor)

    High resolution

    Minimum feature size 300 nm (DWL 66+)

Advancements in microelectronics continuously rely on shrinking electronic devices and incorporating novel materials in active regions to achieve ever-higher speeds and new functionalities in device structures. This exploration of device architectures and use of new materials necessitates a rapid prototyping approach, enabling efficient testing and implementation of design changes.

Maskless lithography tools like the MLA, DWL and VPG+ series of Heidelberg Instruments, have emerged as a transformative technology in microelectronics lithography, offering numerous advantages compared to traditional photolithography. Their high resolution and maskless operation enable precise patterning of intricate microscale features, driving the limits of miniaturization. By eliminating physical masks, production costs are reduced, and rapid prototyping becomes feasible, accelerating development cycles. The technology’s flexibility allows for on-the-fly customization, tailoring each device on the wafer according to specific requirements.

The NanoFrazor facilitates nanoelectronics by combining Thermal Scanning Probe Lithography (t-SPL) with Direct Laser Sublimation. This thermal nanolithography technique enables the creation of nanostructures in the most critical regions of devices with the highest resolutions. The incorporation of laser direct sublimation of the same thermal resists allows for efficient writing of electrical traces and contacts. As a result, the NanoFrazor has become an ideal choice for nanoelectronic device fabrication, particularly in applications such as quantum electronics and molecular sensing.

Dense patterns with high resolution features and low line edge roughness

Precise overlay of several layers

Compatibility with existing pattern transfer processes

Fast turnaround time with high flexibility

Fast prototyping

No mask required

No charge accumulation

Critical insulating layers not impacted by charged particles

Accurate overlay

using alignment marks or none. The functional structured layer can be used as reference (NanoFrazor and Draw Mode)

Ultra-high resolution (15 nm)

without the need for proximity effect corrections (NanoFrazor)

High resolution

Minimum feature size 300 nm (DWL 66+)

Application images

suitable Systems

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