High Aspect Ratio

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Aspect Ratios of up to 40:1 in SU-8

  • Description

  • Application areas such as MEMS and microfluidics often require microstructures that have a high aspect ratio. Our direct write lithography systems can directly expose thick layers of resist, such as SU-8, while maintaining a vertical side wall. This is possible by adjusting the entrance pupil of the lens, which increases the DoF, thereby reducing the numerical aperture which allows for aspect ratios of up to 40:1 to be achieved. Features with ultra-high lateral resolution and aspect ratio can then be produced by etch amplification using RIE.

Application areas such as MEMS and microfluidics often require microstructures that have a high aspect ratio. Our direct write lithography systems can directly expose thick layers of resist, such as SU-8, while maintaining a vertical side wall. This is possible by adjusting the entrance pupil of the lens, which increases the DoF, thereby reducing the numerical aperture which allows for aspect ratios of up to 40:1 to be achieved. Features with ultra-high lateral resolution and aspect ratio can then be produced by etch amplification using RIE.

Related images

High Aspect Ratio pillars with a 10 µm diameter patterned on the MLA 150
These high aspect ratio pillars with a diameter of 10 µm were patterned on the MLA 150.
rectangular pillars, used for MEMS
Example structure of rectangular pillars patterned in 25 µm of SU-8.
High-resolution features written 35nm deep into PPA using the NanoFrazor Explore and amplified to 4 µm depth in Si using two reactive ion etching steps.
High-resolution features written 35nm deep into PPA using the NanoFrazor Explore and amplified to 4 µm depth in Si using two reactive ion etching steps. (Courtesy LMIS1 at EPFL, publication Lisunova MEE 2017)
grid test pattern, used for MEMS
Grid test pattern structured in 25 μm thick SU-8.
800 µm thick SU-8 resist was exposed in one step using the MLA 150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
800 µm thick SU-8 resist was exposed in one step using the MLA 150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
high-aspect ratio test microstructures, used in MEMS
Fabricated high-aspect-ratio test microstructures in 110 μm thick AZ 125nXT.
Exposure of 10 µm thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces.
Exposure of 10 µm thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces. (Courtesy of CMi EPFL)
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls.
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls. (Courtesy of imec, publication Marneffe et al. in ACS Nano 2018)

Suitable Systems

MLA 150 Maskless Aligner

MLA 150 Maskless Aligner

  • Maskless Aligner

The fastest maskless tool for rapid prototyping, the alternative to the mask aligners. Perfect for standard binary lithography.

DWL 66+

DWL 66+ Laser Lithography System

  • Direct Write Laser Lithography System

Our most versatile system for research and prototyping with variable resolution and wide selection of options.

NanoFrazor tabletop

NanoFrazor Nanolithography Tool

  • Thermal Scanning Probe Lithography System

Versatile & modular tool combining Thermal Scanning Probe Lithography, Direct Laser Sublimation, and advanced automation for cutting-edge R&D. 

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Disclaimer: Translations were created with the help of AI. Heidelberg Instruments does not guarantee the completeness and correctness of the translations.

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