高宽比

CONTACT

SU-8 中的纵横比高达 40:1

  • Description

  • 微机电系统（MEMS）和微流体等应用领域通常需要高纵横比的微结构。我们的直接写入光刻系统可以在保持垂直侧壁的情况下，直接曝光厚层抗蚀层（如 SU-8）。这可以通过调整透镜的入口瞳孔来实现，入口瞳孔会增大 DoF，从而减小数值孔径，从而实现高达 40:1 的高宽比。然后，通过使用 RIE 进行蚀刻放大，可以制作出具有超高横向分辨率和纵横比的特征。

微机电系统（MEMS）和微流体等应用领域通常需要高纵横比的微结构。我们的直接写入光刻系统可以在保持垂直侧壁的情况下，直接曝光厚层抗蚀层（如 SU-8）。这可以通过调整透镜的入口瞳孔来实现，入口瞳孔会增大 DoF，从而减小数值孔径，从而实现高达 40:1 的高宽比。然后，通过使用 RIE 进行蚀刻放大，可以制作出具有超高横向分辨率和纵横比的特征。

Related images

These high aspect ratio pillars with a diameter of 10 µm were patterned on the MLA 150.
These high aspect ratio pillars with a diameter of 10 µm were patterned on the MLA 150.
Example structure of rectangular pillars patterned in 25 µm of SU-8.
Example structure of rectangular pillars patterned in 25 µm of SU-8.
High-resolution features written 35nm deep into PPA using the NanoFrazor Explore and amplified to 4 µm depth in Si using two reactive ion etching steps. (Courtesy LMIS1 at EPFL, publication Lisunova MEE 2017)
High-resolution features written 35nm deep into PPA using the NanoFrazor Explore and amplified to 4 µm depth in Si using two reactive ion etching steps. (Courtesy LMIS1 at EPFL, publication Lisunova MEE 2017)
Grid test pattern structured in 25 μm thick SU-8.
Grid test pattern structured in 25 μm thick SU-8.
800 µm thick SU-8 resist was exposed in one step using the MLA 150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
800 µm thick SU-8 resist was exposed in one step using the MLA 150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
Fabricated high-aspect-ratio test microstructures in 110 μm thick AZ 125nXT.
Fabricated high-aspect-ratio test microstructures in 110 μm thick AZ 125nXT.
Exposure of 10 µm thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces. (Courtesy of CMi EPFL)
Exposure of 10 µm thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces. (Courtesy of CMi EPFL)
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls. (Courtesy of imec, publication Marneffe et al. in ACS Nano 2018)
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls. (Courtesy of imec, publication Marneffe et al. in ACS Nano 2018)

Suitable Systems

MLA 150 无掩膜对准器

工作重点 150

  • 无掩膜对准器

用于快速原型制作的最快无掩模工具，是掩模校准器的替代品。非常适合标准二进制光刻。

DWL 66+

DWL 66+

  • 直接写入激光光刻系统

我们最通用的研究和原型制作系统，具有可变分辨率和多种选项。

NanoFrazor 台式

纳米光栅

  • 热扫描探针光刻系统

多功能模块化 工具 组合热扫描探头 光刻, 直接激光升华和 先进的 自动化用于 尖端研发。研发。

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