高分辨率和超高分辨率

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光学扫描探针光刻技术 300 纳米，热扫描探针光刻技术 15 纳米

  • Description

  • 分辨率不仅仅是尽可能小的特征尺寸。根据不同的应用，高分辨率的决定因素可能是特征密度、几何形状限制、线边粗糙度或光盘均匀性。

    在分辨率低于 100 纳米的超高分辨率光刻技术中，光刻胶选择和蚀刻的实际工艺以及计量功能成为关键因素。

    我们为光刻系统提供的规格是保守的，在现场验收时很容易达到，这意味着我们系统的曝光结果可能比宣传的更好（如几个例子所示）。

    我们努力将技术推向分辨率的物理极限。我们的光学系统可以达到低至 300 纳米的尺寸，而我们的NanoFrazor 热扫描探针光刻系统可以利用超锐利的加热针尖实现 15 纳米的孤立特征尺寸。

分辨率不仅仅是尽可能小的特征尺寸。根据不同的应用，高分辨率的决定因素可能是特征密度、几何形状限制、线边粗糙度或光盘均匀性。

在分辨率低于 100 纳米的超高分辨率光刻技术中，光刻胶选择和蚀刻的实际工艺以及计量功能成为关键因素。

我们为光刻系统提供的规格是保守的，在现场验收时很容易达到，这意味着我们系统的曝光结果可能比宣传的更好（如几个例子所示）。

我们努力将技术推向分辨率的物理极限。我们的光学系统可以达到低至 300 纳米的尺寸，而我们的NanoFrazor 热扫描探针光刻系统可以利用超锐利的加热针尖实现 15 纳米的孤立特征尺寸。

Related images

The 300 nm wide channel waveguide coupled to a ring resonator with a radius of 3 µm was written using the high-resolution write mode HiRes on the DWL 66+. Submicron waveguides, resonators and similar microstructures are used in optoelectronics to guide or study electromagnetic radiation. This design was created with the “Nanolithography Toolbox”, K.C. Balram et al., J. Res. natl. Inst. Stand. 121, pp. 464-475 (2016).
The 300 nm wide channel waveguide coupled to a ring resonator with a radius of 3 µm was written using the high-resolution write mode HiRes on the DWL 66+. Submicron waveguides, resonators and similar microstructures are used in optoelectronics to guide or study electromagnetic radiation. This design was created with the “Nanolithography Toolbox”, K.C. Balram et al., J. Res. natl. Inst. Stand. 121, pp. 464-475 (2016).
A tilted SEM image of nested L-structures etched into silicon. (Courtesy of IBM Research Zurich & Heidelberg Instruments Nano)
A tilted SEM image of nested L-structures etched into silicon. (Courtesy of IBM Research Zurich & Heidelberg Instruments Nano)
Example of a tapered line showing the possibility to resolve 500 nm line width through 1.5 µm thick resist.
Example of a tapered line showing the possibility to resolve 500 nm line width through 1.5 µm thick resist.
A triangular array of alumina dots with diameter of approximately 16 nm was patterned via the high-resolution lift-off process. (Courtesy of Heidelberg Instruments Nano)
A triangular array of alumina dots with diameter of approximately 16 nm was patterned via the high-resolution lift-off process. (Courtesy of Heidelberg Instruments Nano)
A SEM image of a 20 nm gap in between two metal electrodes patterned by NanoFrazor and transferred via the high-resolution lift-off process. (Courtesy of Heidelberg Instruments Nano)
A SEM image of a 20 nm gap in between two metal electrodes patterned by NanoFrazor and transferred via the high-resolution lift-off process. (Courtesy of Heidelberg Instruments Nano)
Densely packed gold pillars for plasmonic applications. The PPA resist all around the pillars was removed by the heated NanoFrazor tip. Ar ion beam etching was applied to transfer the pillars into a 20 nm Au film.
Densely packed gold pillars for plasmonic applications. The PPA resist all around the pillars was removed by the heated NanoFrazor tip. Ar ion beam etching was applied to transfer the pillars into a 20 nm Au film.
Lines and spaces with 13.8 nm half-pitch and 2.3 nm LER (3 sigma) in Si. The structures have been etched by reactive ion etching around 50 nm deep into Si from features written into PPA resist by NanoFrazor lithography. (Publication by Ryu et al., ACS Nano, 2017)
Lines and spaces with 13.8 nm half-pitch and 2.3 nm LER (3 sigma) in Si. The structures have been etched by reactive ion etching around 50 nm deep into Si from features written into PPA resist by NanoFrazor lithography. (Publication by Ryu et al., ACS Nano, 2017)
Narrow and broader lines contacted to electrodes prepared by electron beam lithography. The pattern was deposited via the high-resolution lift-off process. (Courtesy of Bojun Cheng, ETH Zurich & Heidelberg Instruments Nano)
Narrow and broader lines contacted to electrodes prepared by electron beam lithography. The pattern was deposited via the high-resolution lift-off process. (Courtesy of Bojun Cheng, ETH Zurich & Heidelberg Instruments Nano)
500 nm lines and spaces patterned with the DWL 66+ and etched into a chrome photo mask.
500 nm lines and spaces patterned with the DWL 66+ and etched into a chrome photo mask.
An ultra-high resolution lift-off process was applied after NanoFrazor lithography in PPA to deposit well defined ellipses made of SiO2 on top of a granular magnetic material.
An ultra-high resolution lift-off process was applied after NanoFrazor lithography in PPA to deposit well defined ellipses made of SiO2 on top of a granular magnetic material.
Gap between two metal electrodes made with NanoFrazor lithography in PPA resist and a simple lift-off process.
Gap between two metal electrodes made with NanoFrazor lithography in PPA resist and a simple lift-off process.
NanoFrazor lithography at its (current) limits. The NanoFrazor AFM image shows inlets with 8.7 nm half-pitch written 2-4 nm deep into PPA. (Pattern transfer was not demonstrated yet at this high feature density PPA structures.)
NanoFrazor lithography at its (current) limits. The NanoFrazor AFM image shows inlets with 8.7 nm half-pitch written 2-4 nm deep into PPA. (Pattern transfer was not demonstrated yet at this high feature density PPA structures.)
High-resolution asymmetrical rings transferred into a gold film via ion beam etching. (Courtesy of Heidelberg Instruments Nano)
High-resolution asymmetrical rings transferred into a gold film via ion beam etching. (Courtesy of Heidelberg Instruments Nano)

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NanoFrazor 台式

纳米光栅

  • 热扫描探针光刻系统

多功能模块化 工具 组合热扫描探头 光刻, 直接激光升华和 先进的 自动化用于 尖端研发。研发。

DWL 66+

DWL 66+

  • 直接写入激光光刻系统

我们最通用的研究和原型制作系统，具有可变分辨率和多种选项。

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