Rapid Prototyping of Nanoelectronic Devices

Moore’s law has pushed the specs of today’s transistors to a level that is often beyond reach for conventional direct-write nanolithography. The high throughput manufacturing technologies like EUV or DUV multi-patterning are too expensive for an efficient exploration of new promising materials and designs promising for next generation chips especially for “Beyond Moore” devices. Alternative rapid prototyping methods are required for the development of such novel nanoelectronic devices.

High-resolution dense features with low roughness of the line edge

Precise overlay of several layers

Compatibility with pattern transfer processes

Fast turnaround time and flexibility

Ultra-high resolution

without the need for proximity corrections

In-situ imaging

immediate quality control of the nanopatterns

No charge accumulation

critical insulating layers are not affected by charged particles

Accurate overlay

without artificial markers and expensive positioning systems

Application images


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