µMLA

Configurable and compact tabletop maskless aligner with raster scan and vector exposure modules

The table-top µMLA system is state-of-the-art in maskless technology built on the renowned µPG platform – the most sold tabletop maskless system worldwide. It is a perfect entry-level research and development (R&D) tool for virtually any application requiring microstructures. Typical examples are microfluidics (cell sorting devices, lab-on-a-chip), small-scale mask-writing, micro-optic and microlens arrays, sensors, MEMS, contacting 2D materials and fanning out electrodes, etc.

µMLA is flexible and customizable. Users can choose between types of exposure modules. The Raster Module is used for fast exposure independent of design complexity. The Vector Module is designed for patterning continuous smooth curves such as waveguides in a faster and more accurate way. Three optical setups offer a choice of variable resolution and throughput. Each allows easy switching between different resolution and speed configurations to optimize exposure for a given application. Draw Mode enables straightforward ad-hoc modifications to existing structures and electrical contacts to nanowires or 2D materials. With its small footprint, µMLA fits on a regular table.

Direct-write Lithography

No mask-related costs, effort, or security risks

Exposure Quality

Edge roughness raster mode 100 nm; vector mode 30 nm; CD uniformity 200 nm

Exposure Speed

4” wafer in 90 minutes

Small Footprint

63x80x53 cm / 25”x32”x21” – the smallest tabletop maskless lithography too

Flexible Configuration

Choice of exposure wavelength; a choice of raster and vector scan modules

Flexible Use

Software enables easy switching for variable resolution and throughput speeds

User-friendly

Intuitive software and tool operation, easy handling of small samples

Plug-and-play Setup

Raster Scan Exposure Mode

Fast with excellent image quality and fidelity, write time is independent of structure size or pattern density. LED light source at 365 or 390 nm

Vector Scan Exposure Mode

Patterning continuous structures consisting of curved lines – where smooth contours are required. Laser light source 405 nm and/or 375 nm

3 Optical Setups

Min. resolution of 0.6 µm, 1 µm and 3 µm; variable resolution within each mode

Optional Overview Camera

Fast and easy location of alignment marks or other features of interest on substrate

Glovebox Integration

MBraun glovebox for patterning of sensitive materials in a controlled Nitrogen environment

Draw Mode

Import and overlay of .bmp files on top of the real-time microscope image — as in a virtual mask aligner; simple lines and shapes can be drawn into the real-time camera image for immediate exposure

Optical Autofocus

Perfect exposure of small samples (less than 10 mm)

Exposure Area

Can be upgraded from 100 x 100 mm to 150 x 150 mm

Choice of Exposure, Wavelength and Source

Raster Scan Mode: LED light source at 365 or 390 nm. Vector Scan Mode: laser light source 405 nm and/or 375 nm

Customer applications

The μMLA also offers a standard Grayscale mode, which allows the creation of structures for a wide range of applications in micro-optics. This example shows micro-lenses written in 15 μm thick AZ4562, with a pitch of 30 μm and a radius of curvature of 16 μm.
(Courtesy of Heidelberg Instruments) — The μMLA also offers a standard Grayscale mode, which allows the creation of structures for a wide range of applications in micro-optics. This example shows micro-lenses written in 15 μm thick AZ4562, with a pitch of 30 μm and a radius of curvature of 16 μm. (Courtesy of Heidelberg Instruments)

A gearwheel structure exposed into 90 μm of SU-8 shows an example of a high-aspect ratio structure. The μMLA can be used with thick resist layers to produce aspect ratios higher than 40:1.
(Courtesy of P. Pittet and N. Terrier (INL) - Université Lyon 1) — A gearwheel structure exposed into 90 μm of SU-8 shows an example of a high-aspect ratio structure. The μMLA can be used with thick resist layers to produce aspect ratios higher than 40:1. (Courtesy of P. Pittet and N. Terrier (INL) - Université Lyon 1)

Binary diffractive optical element comprised of 1µm² squares and exposed into 500 nm thick Shipley S1805.
(Courtesy of Heidelberg Instruments) — Binary diffractive optical element comprised of 1µm² squares and exposed into 500 nm thick Shipley S1805. (Courtesy of Heidelberg Instruments)

Cage structures made of circa 50-µm-thick SU-8. The structures were created by two consecutive exposures without unloading the substrate. First, the pillars were exposed with a high dose. Afterwards, a lower exposure dose was used to only polymerize the uppermost regions of the resist. The structures are used to trap and grow live cells.
(Courtesy of the University of Hamburg) — Cage structures made of circa 50-µm-thick SU-8. The structures were created by two consecutive exposures without unloading the substrate. First, the pillars were exposed with a high dose. Afterwards, a lower exposure dose was used to only polymerize the uppermost regions of the resist. The structures are used to trap and grow live cells. (Courtesy of the University of Hamburg)

A microfluidic system patterned using uMLA.
(Courtesy of Heidelberg Instruments) — A microfluidic system patterned using uMLA. (Courtesy of Heidelberg Instruments)

Single Ni nanowires (horizontal line in the image) with two precisely aligned thermometer structures used to investigate Co-Ni alloy magneto-thermopower and magneto-resistance.
(Courtesy of Tim Boehnert, University of Hamburg) — Single Ni nanowires (horizontal line in the image) with two precisely aligned thermometer structures used to investigate Co-Ni alloy magneto-thermopower and magneto-resistance. (Courtesy of Tim Boehnert, University of Hamburg)

In many applications, several layers need to be exposed on the same substrate. The μMLA’s cameras can automatically detect alignment markers and adjust the position, rotation, scaling and orthogonality of the exposure to the existing structures. The image shows Vernier scales and a “cross-in-cross” structure, employed to measure the remaining offset in x and y direction.
(Courtesy of Heidelberg Instruments) — In many applications, several layers need to be exposed on the same substrate. The μMLA’s cameras can automatically detect alignment markers and adjust the position, rotation, scaling and orthogonality of the exposure to the existing structures. The image shows Vernier scales and a “cross-in-cross” structure, employed to measure the remaining offset in x and y direction. (Courtesy of Heidelberg Instruments)

Concentric rings with 1-μm line width were written into the photoresist using the Raster Scan exposure mode.
(Courtesy of Heidelberg Instruments) — Concentric rings with 1-μm line width were written into the photoresist using the Raster Scan exposure mode. (Courtesy of Heidelberg Instruments)

	Write Mode I*	Write Mode II*	Write Mode III*
Writing performance (Raster Scan Exposure Module)
Minimum structure size [μm]	0.6	1	3
Minimum lines and spaces [μm]	0.8	1.5	3
Address grid [nm]	20	50	100
CD uniformity [3σ, nm]	200	300	400
2nd layer alignment over 5 x 5 mm² [nm]	500	500	1000
2nd layer alignment over 50 x 50 mm² [nm]	1000	1000	2000

Write speed	with 390 nm LED / 365 nm LED	with 390 nm LED / 365 nm LED	with 365 nm LED
Write speed	10 mm²/min at 0.6 µm	40 mm²/min at 1 µm	100 mm²/min at 3 µm
Optional write speeds at different minimum structure sizes with “Variable Resolution for Raster Scan Exposure Module”	18 mm²/min at 1 µm	60 mm²/min at 2 µm	120 mm²/min at 4 µm
	25 mm²/min at 2 µm	90 mm²/min at 4 µm	240 mm²/min at 6 µm

Writing performance (Vector Exposure Module)
Minimum feature size [µm]	0.6	1	3
Address grid [nm]	20	20	20
2nd layer alignment over 5 x 5 mm² [nm]	500	500	1000
2nd layer alignment over 50 x 50 mm² [nm]	1000	1000	2000
Maximum linear write speed in Vector Mode		200 mm/s
Available spot sizes in Vector Mode [µm]	0.6 / 1 / 2 / 5 / 10	1 / 2 / 5 / 10 / 25	3 / 5 / 10 / 25 /50

System specifications
Maximum substrate size		6″ x 6″
Minimum substrate size		5 mm x 5 mm
Substrate thickness		0.1 to 12 mm
Maximum write area		150 mm x 150 mm

	Raster scan exposure module	Vector exposure module
Light source	LED; 390 nm or 365 nm	Laser; 405 nm and/or 375 nm

System dimensions (lithography unit)
µMLA	Width x Depth	Height x Weight
Main system housing	640 mm (25″) x 840 mm (33″)	530 mm (21″) x 130 kg (285 lbs)

Installation requirements
Electrical	230 VAC / 6A or 110 VAC / 12A (± 5%, 50/60 Hz)
Compressed air	6 - 10 bar, stability ± 0.5 bar
Cleanroom	ISO 6 recommended
Temperature stability	±1°C

* Only one write mode can be installed on the system

Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice

Download BROCHURE

µMLA

Configurable and compact tabletop maskless aligner with raster scan and vector exposure modules

Direct-write Lithography

Exposure Quality

Exposure Speed

Small Footprint

Flexible Configuration

Flexible Use

User-friendly

Plug-and-play Setup

Raster Scan Exposure Mode

Vector Scan Exposure Mode

3 Optical Setups

Optional Overview Camera

Glovebox Integration

Draw Mode

Optical Autofocus

Exposure Area

Choice of Exposure, Wavelength and Source

Customer applications

Technical Data

Get in Touch

Sign up

Stay connected

SOLUTIONS

KEY FEATURES

CORE TECHNOLOGIES

PRODUCTS

COMPANY