High Aspect Ratio

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Aspect Ratios of up to 40:1 in SU-8

MEMS, microfluidics and other applications often require microstructures with high aspect ratio. Our direct-write lithography systems can directly expose thick resists like SU-8. Perfectly straight vertical walls can be obtained, because the diameter of entrance pupil can be adjusted so that the depth of field (DOF) becomes very large (reducing numerical aperture). Features with ultra-high lateral resolution and aspect ratio can be produced by etch amplification using reactive ion etching.

Application images

Example structure of rectangular pillars patterned in 25 µm of SU-8.
Example structure of rectangular pillars patterned in 25 µm of SU-8.
High-resolution features written 35nm deep into PPA using the NanoFrazor Explore and amplified to 4 µm depth in Si using two reactive ion etching steps. (Courtesy LMIS1 at EPFL, publication Lisunova MEE 2017)
High-resolution features written 35nm deep into PPA using the NanoFrazor Explore and amplified to 4 µm depth in Si using two reactive ion etching steps. (Courtesy LMIS1 at EPFL, publication Lisunova MEE 2017)
Grid test pattern structured in 25 μm thick SU-8.
Grid test pattern structured in 25 μm thick SU-8.
800 µm thick SU-8 resist was exposed in one step using the MLA 150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
800 µm thick SU-8 resist was exposed in one step using the MLA 150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
Fabricated high-aspect-ratio test microstructures in 110 μm thick AZ 125nXT.
Fabricated high-aspect-ratio test microstructures in 110 μm thick AZ 125nXT.
Exposure of 10 µm thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces. (Courtesy of CMi EPFL)
Exposure of 10 µm thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces. (Courtesy of CMi EPFL)
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using a sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls. (Courtesy of imec, publication Marneffe et al. in ACS Nano 2018)
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using a sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls. (Courtesy of imec, publication Marneffe et al. in ACS Nano 2018)
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suitable Systems

DWL 66+ – a laser lithography tool for R&D in microelectronics, MEMS, microfluidics and more with Grayscale exposure mode

DWL 66+

  • Direct Write Laser Lithography System

Our most versatile system for research and prototyping with variable resolution and wide selection of options.

MLA 150 – a maskless lithography tool for nanofabrication of quantum devices, MEMS, micro-optics and other applications

MLA 150

  • Maskless Aligner

The fastest maskless tool for rapid prototyping, the alternative to the mask aligners. Perfect for standard binary lithography.

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