High Aspect Ratio

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Aspect Ratios of up to 40:1 in SU-8

MEMS, microfluidics and other applications often require microstructures with high aspect ratio. Our direct-write lithography systems can directly expose thick resists like SU-8. Perfectly straight vertical walls can be obtained, because the diameter of entrance pupil can be adjusted so that the depth of field (DOF) becomes very large (reducing numerical aperture). Features with ultra-high lateral resolution and aspect ratio can be produced by etch amplification using reactive ion etching.

Application images

Example structure of rectangular pillars patterned in 25 25 µm of SU-8.
Example structure of rectangular pillars patterned in 25 25 µm of SU-8.
High-resolution features written 35nm-deep into PPA using the NanoFrazor Explore and amplified to 4-µm-depth in Si using two reactive ion etching steps. (Courtesy LMIS1 at EPFL, publication Lisunova MEE 2017)
High-resolution features written 35nm-deep into PPA using the NanoFrazor Explore and amplified to 4-µm-depth in Si using two reactive ion etching steps. (Courtesy LMIS1 at EPFL, publication Lisunova MEE 2017)
Grid test pattern structured in 25 μm thick SU-8.
Grid test pattern structured in 25 μm thick SU-8.
800-µm-thick SU-8 resist was exposed in one step using the MLA150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
800-µm-thick SU-8 resist was exposed in one step using the MLA150. The depth of field was optimized to achieve straight vertical walls over the full film thickness.
Fabricated high-aspect-ratio test microstructures in 110 μm thick AZ 125nXT.
Fabricated high-aspect-ratio test microstructures in 110 μm thick AZ 125nXT.
Exposure of 10-µm-thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces. (Courtesy of CMi EPFL)
Exposure of 10-µm-thick resist (AZ 9260) with 2 µm and 4 µm lines and spaces. (Courtesy of CMi EPFL)
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using a sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls. (Courtesy of imec, publication Marneffe et al. in ACS Nano 2018)
Ultra-high resolution features with high aspect ratio in Si. The structures were written only a few nanometer deep into PPA with a NanoFrazor Explore. Using a sequential infiltration synthesis processes and hard masks, the structures could be etched deep into Si while maintaining smooth walls. (Courtesy of imec, publication Marneffe et al. in ACS Nano 2018)
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Systems

Read more about the DWL 66+ Laser Lithography System.

DWL 66+

  • Direct Write Laser Lithography System

Our most versatile system for research and prototyping with variable resolution and wide selection of options.

Learn more about the MLA150 Maskless Aligner.

MLA 150

  • Maskless Aligner

The fastest maskless tool for rapid prototyping, the alternative to the mask aligners. Perfect for standard binary lithography.

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