Scalable Layer‐Controlled Oxidation of Bi2 O2 Se for Self‐Rectifying Memristor Arrays With sub‐pA Sneak Currents
UV-assisted oxidation created β-Bi2SeO5/Bi2O2Se heterostructure memristors with self-rectifying switching, high ON/OFF ratios, sub-pA sneak currents, sub-100 ns speed, low power, enabling scalable neuromorphic arrays.










