High resolution lines and spaces (optical)
500 nm lines and spaces patterned with the DWL 66+ and etched into a chrome photo mask.
Resolution is much more than smallest feature size. Depending on the application feature density, restrictions on geometry, line-edge roughness or critical dimension uniformity (CDU) can be the actual decisive requirements for “resolution”.
For ultra-high resolution below 100 nm size, the actual process (resist choice, etching, etc) as well as metrology become increasingly critical.
For our lithography systems, we specify numbers that can be easily demonstrated during site acceptance tests of the systems. With more effort and good process control, much better results can be achieved (as shown with some of the examples).
At Heidelberg Instruments we push technology to approach the physical limits of resolution. Our optical lithography systems can reach dimensions down to 300 nm (smaller also demonstrated). Below this resolution we offer our NanoFrazor systems which have been demonstrated to go even below 10 nm resolution using their ultra-sharp heated tips.
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