Moore’s law has pushed the specs of today’s transistors to a level that is often beyond reach for conventional direct-write nanolithography. The high throughput manufacturing technologies like EUV or DUV multi-patterning are too expensive for an efficient exploration of new promising materials and designs promising for next generation chips especially for “Beyond Moore” devices. Alternative rapid prototyping methods are required for the development of such novel nanoelectronic devices.
High-resolution dense features with low roughness of the line edge
Precise overlay of several layers
Compatibility with pattern transfer processes
Fast turnaround time and flexibility
High-resolution features (below 10 nm width at 14 nm half-pitch) written only a few nanometer deep into PPA with a NanoFrazor Explore and etched into Si. IMEC scientists used these PPA nanostructures to test new SIS (sequential infiltration synthesis) processes for enhanced etch transfer. Courtesy of imec, Publication in 2018
Single-electron transistors in doped Si operating at room temperature. The whole device was patterned in under 5 minutes’ time with the mix&match NanoFrazor system using thermal probe for the sub-25 features and integrated laser writing for the contact wires. Courtesy of Imperial college and IBM Research, Publication in 2018
Sharp vertical Ag electrodes made with the NanoFrazor tip. The precisely controlled distance to a Pt allowed the atomic filaments to switch on and off at high frequencies (>100 MHz) and low voltages (100 mV). Courtesy of Prof. Leuthold group at ETH Zurich, Publication in 2019
High-resolution metal top gates placed accurately on top of an InAs nanowire using NanoFrazor patterning and lift-off. The device showed superior behavior with a subthreshold slope very close to the theoretical limit of 60 mV/dec. The key advantage of the NanoFrazor here is that it prevents thin Al2O3 gate oxide from trapping electrons during patterning, which would deteriorate the device performance. Courtesy of IBM Research, Publication in 2019
without the need for proximity corrections.
immediate quality control of the nanopatterns.
No charge accumulation
critical insulating layers are not affected by charged particles.
without artificial markers and expensive positioning systems.
Get in touch with us for more information about our products and services, answers to questions about our technology and everything else about Heidelberg Instruments.