Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

Fabrication of a p-GaN gate HEMT with an air-bridge source connection using direct grayscale lithography, achieving good performance with high breakdown voltage and low on-resistance.

File Type: 3390/cryst13050815
Categories: Scientific Paper
Tags: Direct-writing, DWL 66
Author: Crystals
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