SiEM sensor utilizing metal-assisted chemical etching to create high aspect ratio silicon pillars with charge multiplication capabilities. Electrical tests confirm compatibility with p–n junctions.
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Scientific Paper
SiEM sensor utilizing metal-assisted chemical etching to create high aspect ratio silicon pillars with charge multiplication capabilities. Electrical tests confirm compatibility with p–n junctions.
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Disclaimer: Translations were created with the help of AI. Heidelberg Instruments does not guarantee the correctness of the translations.