Rapid Prototyping of Nanoelectronic Devices

Moore’s law has pushed the specifications of today’s transistors to a level that is often beyond reach for conventional direct-write nanolithography. The high throughput manufacturing technologies, such as EUV or DUV multi-patterning systems, are too expensive for the efficient exploration of promising new materials and designs necessary for next-generation chips – especially for the “Beyond Moore” devices. Alternative rapid prototyping methods are required and sought after for the development of such novel nano-electronic devices.

Dense patterns with high resolution features and low line edge roughness

Precise overlay of several layers

Compatibility with existing pattern transfer processes

Fast turnaround time with high flexibility

Ultra-high resolution

Possible without the need for proximity effect corrections

In-situ imaging

Immediate feedback and quality control of the nano-patterns

No charge accumulation

Critical insulating layers are not impacted by charged particles

Accurate overlay

No artificial markers or expensive positioning systems required

Application images

suitable Systems

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